With the recent explosive demand for data storage, ranging from data centers to various smart and connected devices, the need for higher-capacity and more compact memory devices is constantly ...
Multi-layer 3-dimensional (3D) vertical RRAM (VRRAM) PUF with in-cell stabilization scheme to improve both cost efficiency and reliability. The proposed PUF features excellent resistance against ...
“Three-dimensional (3D) semiconductor devices can address the limitations of traditional two-dimensional (2D) devices by expanding the integration space in the vertical direction. A 3D NOT-AND (NAND) ...