Researchers from Penn State have demonstrated a novel method of 3D integration using 2D materials. This advancement, detailed in their recent study, addresses the growing challenge of fitting more ...
After dominating the electronics industry for decades, conventional silicon-based transistors are gradually approaching their limits, which is preventing engineers from further reducing their size ...
2D transistors based on 2D materials have been demonstrated in academia and research labs for more than a decade, but none of these demonstrations were compatible with high-volume semiconductor ...
Researchers at Berkeley Lab, using a trio of single-atom-thick wonder materials -- graphene, boron nitride, and molybdenite -- have created the first all-2D field-effect transistor. This FET could ...
During the keynote speech at the IEEE International Electron Devices Meeting (IEDM) held at the end of 2024, 2D Field Effect Transistors (2D FET) and carbon nanotubes were mentioned as potential ...
A new technical paper titled “Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors” was published by researchers at The Pennsylvania State ...
With the right mix of materials, TFETs promise cooler, smaller, and more efficient circuits for everything from the Internet of Things to brain-inspired computers. But before they can leave the lab, ...
Forbes contributors publish independent expert analyses and insights. Covering Digital Storage Technology & Market. IEEE President in 2024 This last week I had my last two public appearances as the ...
Researchers unveil 3D transistors using 2D semiconductors, enabling energy-efficient, high-performance electronics with unprecedented miniaturization. (Nanowerk News) In a significant advancement for ...
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